switch insertion

An ultra low insertion loss GaAs MMIC RF SPDT switch based on full-ion-implantation technology is reported.

报道了利用离子注入技术研制出一种用于手机的超低插损砷化镓单片射频单刀双掷开关.

The actuation voltage of the fabricated 3-resonance point switch is 7 V, the insertion loss is 0.69 dB@ 10.4 GHz, and the isolation is 30.8 dB@ 10.4 GHz. The performance is far better than traditional single-resonance switch at frequency lower than 13.5 GHz.

三谐振点开关的在片测试结果为：驱动电压为7V，开态的插入损耗为0.69dB@10.4GHz，关态的隔离度为30.8dB@10.4GHz，其微波性能在0~13.5GHz频段下优于类似结构的传统单谐振点开关。